The theory of electron states is developed on the adsorbed surface of semiconductor which is bounded by the rough surface. The surface roughness are formed by both quasi-Rayleigh acoustic wave and adsorbed atoms. A spectrum of surface electron states on the adsorbed surface of GaAs semiconductor in the long-wavelength, resonanсe and shortwave approximations is founded, taking into account the interaction of the first three electron harmonics under the action of an acoustic quasi-Rayleigh wave. It is shown that the dependences of the energy band gap width on the surface of the semiconductor and the length of the spatial localization of electron wave function on the adsorbed atoms concentration in the interval 13 2 0 0 10 d N sm   have the nonmonotonic character.

An electrostatic-deformation model of atomic hydrogen passivation of electrically active centers of the type of compression defects in Cd1 -xZnxTe semiconductors is proposed. It is found that the effect of increasing passivation of electrically active centers in Cd1 -xZnxTe occurs when the concentration of atomic hydrogen NH does not exceed the concentration of acceptors NA (NH  NA), and weakening of the passivation effect is observed when the concentration of atomic hydrogen NH is much higher than the concentration of acceptors NA (NH  NA). The expression for the resolution Ri of optical-registering metal-dielectricsemiconductor nanostructures Cd1 -xZnxTe (0  x  1) is obtained and the resolution value for nonpassivated as well as for passivated in the hydrogen atmosphere semiconductor material Cd0.8Zn0.2Te is calculated, which is R1  6682 and R2  17423, respectively. A method for expanding the spectral range of optical information recording based on n-p-i-m nanostructures by changing the composition (0  x  1) of the solid solution Cd1 -xZnxTe is proposed.