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The Er2O3 quantum dot (cluster) with dimensions about 1.2 nm in silicon is discussed as a possible source of the Er-related emission in Si:Er, O, excited by hot carriers in the light-emitting diodes under reverse bias. This quantum dot is represented as a spherical quantum well 1 eV in depth. The electron resonance level with energy about 0.8 eV above the bottom of the silicon conduction band plays the role of an electron trap. The energy of 1.6 eV hot electrons trapped by the Er–O cluster is transferred to excitation of the f shell of erbium.

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The Er169(169Tm)emission Mössbauer spectroscopy has evidenced that photoluminescence centers in Er-doped amorphous hydrogenated silicon are [Er–O] clusters. The local environment of the Er3+ ions in the clusters is similar to the Er3+ environment in Er2O3.

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