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Abstract. Modulation doped N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs-heterostructures with InAs-quantum dots in device channel have been grown and investigated. Their photoluminescence spectra and electrical transport properties both in low and high electric fields were studied. Using these structures, modulation doped FET's have been fabricated and analyzed. It was demonstrated that the quantum dot FET's present the new type of the hot electron devices, promising for high speed applications.

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