The potential well depth for an electron in a nanoheterosystem with quantum dots has been calculated in the framework of the self-consistent electron-deformation model. It is shown that the strained InAs/GaAs nanoheterosystem with InAs spherical quantum dots is characterized by deformation fields, which appear at the quantum dot-matrix interface and result in the enhancement of polaron effects in comparison with the unstrained material. The electron polaron energy is calculated, by considering the electrostatic energy and the energy associated with the mechanical and electron-deformation strain components in the quantum-dot and matrix materials. K e y w o r d s: quantum dot, polaron, electron-deformation potential, binding energy, electron.

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