This letter reports superior properties of Ru- and RuNX-bearing Cu films deposited by cosputtering on barrierless Si substrates. After annealing at temperatures up to 680°C for 1h, low resistivity of ∼3μΩcm and minimal leakage currents as well as no detectable reaction at the Cu∕Si interface have confirmed the excellent thermal stability of these Cu(Ru) and Cu(RuNX) films. Furthermore, the highly stable Cu(RuNX) film exhibits an outstanding adhesion property, proving to be a very promising candidate for the barrierless Cu metallization.

The electrodeposition of zinc telluride (ZnTe) thin films on tin conductive oxide substrates in aqueous solution containing TeO 2 and ZnSO 4 was studied. The electrodeposition mechanism was investigated by cyclic voltammetry. The appropriate potential region where formation of stoichiometric ZnTe semiconductor occurs, was found to be −1.1 V versus saturated calomel electrode, and the pH was maintained at 3.5 ± 0.1. The crystallographic structure of the deposited film is seen to be cubic with a preferential orientation along the (111) phase. Optical absorption studies reveal a bandgap of 2.26 eV and optical constants (n and k) are evaluated. Scanning electron microscopy imaging was used to study the surface morphology. The composition of ZnTe films was analysed using an electron microprobe analyser, and the results are discussed.

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