Temperature-dependent reverse-bias current-voltage data obtained by Miller et al. [Appl. Phys. Lett. 84, 535 (2004)] for Schottky diodes fabricated on n-GaN are reinterpreted in terms of a phonon-assisted tunneling model. It is shown that the temperature dependence of the reverse-bias leakage current may be caused by the temperature dependence of the electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of the semiconductor. A good fit of the experimental data with this theoretical model is obtained in the entire temperature range from 80to400K, when an effective mass of 0.222me and a phonon energy of 70meV are used for the calculation. The reverse current-voltage data for GaN diodes are also explained on the basis of this model.

The results of current–voltage (I–V) characteristics measured at different temperatures in polyethylene (PE) films obtained by our own experiments and the ones extracted from Suh K S et al (2000 J. Appl. Phys. 87 7333) are presented. The current depended strongly on temperature, namely, it increased with increase of temperature. The non-linearity in the I–V behaviour was observed at higher voltages. We suggest a phonon-assisted tunnelling model to explain the experimental results. The current mechanism in polymer diphenylaminostyrylbenzene (DASMB) films and in tris(8-hydroxyquinoline) aluminium (Alq3) films are also discussed.

No abstract

The current -voltage (I-V) characteristics in mica have been measured at different temperatures. The I-V characteristics possessed a temperature dependence, which was more clearly evident at lower fields. A comparison of the experimental results with the Frenkel thermo-emission theory and the theory of multiphonon-assisted tunnelling of charge carriers from the impurity centers, has been performed. It is shown that the experimental data better agree with the phonon-stimulated tunnelling theory than the Frenkel emission theory. Temperature-dependent I-V characteristics of М-SiO 2 -Si structures measured by Waters and Van Zeghbroeck [Appl. Phys. Lett. 76, 8, 1039 (2000)] are also reinterpreted in terms of the phonon-assisted tunnelling processes.

We present here experiments on current-voltage (I-V) characteristics measured at different temperatures for ferroelectric semiconductor SbSI. The I-V characteristics exhibited an evident dependence on temperature and supralinearity in the region of high voltages. Temperature dependent I-V characteristics are explained on assumption that the current is caused by a process of the phonon-assisted electron tunneling from the traps located in the region of a high electric field. Under basis of this model the results on current dependences on voltage and temperature obtained by other authors are also explained.