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The effect of electron irradiation with E = 2 MeV and a dose of 1.9 × 10 17 el/cm 2 of annealed and pristine carbon nanotubes (CNTs) on the electrical conductivity σ(ρ), thermoelectric emf (α), and elastic characteristics during deformation and relaxation during unloading is studied. The annealing of CNTs at 800°C removes the topological defects (the Stone-Wales ones, vacancies, and adatoms) which distort the CNT shape. As is found, after electron irradiation with small doses (0.63 × 10 17 el/cm 2 ), the defects accumu late, while at high doses (1.9 × 10 17 el/cm 2 ) they are healed. The growth and radiation defects lead separately to a topological disorder, reducing the σ(ρ) parameter and increasing α. However, upon irradiation and dur ing the interaction between the defects of different genesis, their healing becomes more effective in compar ison with annealing, and the mechanism of effective healing can be associated with the small CNT sizes, rapid migration of the sputtered atoms between the graphene layers, and their recombination with vacancies.

Formation and growth of dislocation loops of interstitial type in Al (99.999%) during in situ irra diation with 1 MeV electrons at 20-150°C using a high voltage electron microscope are investigated by transmission electron microscopy. Experimental results are analyzed within the classical theory and kinetic model of nucleation and growth of loops. The parameters controlling the process of radiation induced for mation of interstitial dislocation loops under irradiation are determined.Keywords: dislocation loops, nucleation and growth of loops, high voltage electron microscopy (HVEM), kinetic model of loop growth.

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