Very low deposition rates, below 0.56 nm/min, of Si02 were investigated using photoinduced chemical vapor deposition (Photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiOl. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.