Continuous-wave Raman generation in a compact solid-state laser system pumped by a multimode diode laser is demonstrated. The Stokes radiation of stimulated Raman scattering at 1.181 microm is generated as a result of self-frequency conversion of the 1.067 microm laser radiation in Nd3+:KGd(WO4)2 crystal placed in the cavity. The Raman threshold was measured at 1.15 W of laser diode power. The highest output power obtained at the Stokes wavelength was 54 mW. The anomalous delay of Raman generation relative to the start of laser generation (the oscillation buildup) due to slow accumulation of Stokes photons in the cavity at low Raman gain and Raman threshold dependence not only on the laser intensity but also on the time of laser action are observed.

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Continuous-wave Raman generation on PbWO 4 crystal placed in the cavity of an end-diode-pumped Nd:YVO 4 laser is demonstrated. The Raman threshold was measured as 0.9 W of the laser-diode power. The highest output power obtained at the first Stokes wavelength 1177 nm was 178 mW at the laser diode power of 2.3 W, corresponding to the slope efficiency of 13%. The Stokes beam quality M 2 did not exceed 1.7.