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Luminescence and scintillation properties of single crystalline films (SCF) of Ce-and Pr-doped Y 3 Al 5 O 12 (YAG) and Lu 3 Al 5 O 12 (LuAG) garnets were analysed and compared with their bulk single crystal (SC) analogues. It was shown that the main peculiarities of luminescent properties of Ce-and Pr-doped YAG and LuAG SCF are due to the absence of Y Al and Lu Al antisite defects (AD) and to the extremely low concentration of vacancy-type defects in SCF with respect to SC. In SCF the absence of the AD-related traps results in faster energy transfer to the emission centres and accelerated scintillation response.

Intrinsic emission of complex oxides with garnet structure was studied by means of the analyses of the time-resolved luminescence spectra and decay kinetic for single crystals (SC) and single-crystalline films (SCF) of Y 3 Al 5 O 12 (YAG) and Lu 3 Al 5 O 12 (LuAG) garnets under excitation by the pulse X-ray and synchrotron radiation at 8 -300 K. YAG and LuAG SC and SCF are characterized by significantly different concentration of the Y Al and Lu Al antisite defects (AD) due to the substantial difference in the conditions of their crystallization. For this reason, LuAG and YAG SC and SCF are very useful model objects for the study of nature of the intrinsic emission of these oxides, consisting of the excitons and AD luminescence.

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Luminescent properties and the energy transfer from host to Ce 3+ ions are analyzed in single crystalline films (SCF) of YAlO 3 :Ce (YAP:Ce), Y 1−x Lu x AP:Ce (YLuAP:Ce) and LuAlO 3 :Ce (LuAP:Ce) perovskites in comparison with their single crystal (SC) analogues using the timeresolved luminescence spectroscopy under synchrotron radiation excitation. It is shown that the main peculiarity of luminescent properties of YAP:Ce, YLuAP:Ce and LuAG:Ce SCF is determined by the extremely low concentration of Y Al and Lu Al antisite defects and vacancy-type defects in SCF as compared to SC. The advantages of phosphors based on (Y-Lu)AP:Ce SCF are due to the absence of emission and trapping centers in these SCF which are connected with the above mentioned bulk crystal defects.