Black phosphorus is an infrared layered material. Its bandgap complements other widely studied two-dimensional materials: zero-gap graphene and visible/near-infrared gap transition metal dichalcogenides. Although highly desirable, a comprehensive infrared characterization is still lacking. Here we report a systematic infrared study of mechanically exfoliated few-layer black phosphorus, with thickness ranging from 2 to 15 layers and photon energy spanning from 0.25 to 1.36 eV. Each few-layer black phosphorus exhibits a thickness-dependent unique infrared spectrum with a series of absorption resonances, which reveals the underlying electronic structure evolution and serves as its infrared fingerprints. Surprisingly, unexpected absorption features, which are associated with the forbidden optical transitions, have been observed. Furthermore, we unambiguously demonstrate that controllable uniaxial strain can be used as a convenient and effective approach to tune the electronic structure of few-layer black phosphorus. Our study paves the way for black phosphorus applications in infrared photonics and optoelectronics.

The pseudolayered character of 3D bulk crystals of antimony has led us to predict its 2D single-layer crystalline phase named antimonene in a buckled honeycomb structure like silicene. Sb atoms also form an asymmetric washboard structure like black phospherene. Based on an extensive analysis comprising ab initio phonon and finite-temperature molecular dynamics calculations, we show that these two single-layer phases are robust and can remain stable at high temperatures. They are nonmagnetic semiconductors with band gaps ranging from 0.3 eV to 1.5 eV, and are suitable for 2D electronic applications. The washboard antimonene displays strongly directional mechanical properties, which may give rise to a strong influence of strain on the electronic properties. Single-layer antimonene phases form bilayer and trilayer structures with wide interlayer spacings. In multilayers, this spacing is reduced and eventually the structure changes to 3D pseudolayered bulk crystals. The zigzag and armchair nanoribbons of the antimonene phases have fundamental band gaps derived from reconstructed edge states and display a diversity of magnetic and electronic properties depending on their width and edge geometry. Their band gaps are tunable with the widths of the nanoribbons. When grown on substrates, such as germanene or Ge(111), the buckled antimonene attains a significant influence of substrates.

We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituents monolayers have band edges at the zone center, i.e. Γ valley. Our study, which includes the Group IV and III-V compound monolayer materials, Group V elemental monolayer materials, transition metal dichalcogenides (TMD) and transition metal trichalcogenides (TMT) reveals that almost half of these materials have conduction and/or valence band edges residing at the zone center. Using firstprinciples density functional calculations, we present the type of the heterojunction for 903 different possible combination of these 2D materials which establishes a periodic table of heterojunctions.

The growth of the √ 3 × √ 3 reconstructed silicene on Ag substrate has been frequently observed in experiments while its atomic structure and formation mechanism is poorly understood. Here, by first-principles calculations, we show that √ 3 × √ 3 reconstructed silicene is constituted by dumbbell units of Si atoms arranged in a honeycomb pattern. Our model shows excellent agreement with the experimentally reported lattice constant and STM image. We propose a new mechanism for explaining the spontaneous and consequential formation of √ 3 × √ 3 structures from 3 × 3 structures on Ag substrate. We show that the √ 3 × √ 3 reconstruction is mainly determined by the interaction between Si atoms and have weak influence from Ag substrate. The proposed mechanism opens the path to understanding of multilayer silicon.

The interaction of silicene with Si, C, H, O, Ti atoms along with H 2 , H 2 O and O 2 molecules are investigated and the induced functionalities thereof are analyzed using first principles density functional theory. Si adatom initially adsorbed at the top site of silicene pushes down the Si atom underneath to form a dumbbell like structure with 3+1 coordination. This prediction is important for silicene research and reveal new physical phenomena related with the formation of multilayer Si, which is apparently the precursor state for missing layered structure of silicon. We found that dumbbell structure attributes coverage dependent electronic and magnetic properties to nonmagnetic bare silicene. Even more interesting is that silicene with dumbbells is energetically more favorable than the pristine silicene: The more dense the dumbbell coverage, the stronger is the cohesion. Incidentally, these structures appear to be intermediate between between silicene and silicon. Carbon adatom, which is initially adsorbed to the bridge position, substitutes one Si atom, if it overcomes a small energy barrier. Oxygen molecule can dissociate on silicene surface, whereby constituent oxygen atoms oxidize silicene by forming strong bonds. By varying the concentration and decoration of carbon, hydrogen and oxygen atoms one can tune the band gap of silicene. Through the adsorption of hydrogen or titanium adatom, silicene acquires spin polarized state. A half metallic ferromagnetic behavior is attained at specific uniform coverage of Ti adatom, which may function as a spin valve.