V. Patiri scite author profile

A full design approach for developing very highspeed transimpedance amplifier (TIA) monolithic microwave integrated circuits (MMIC's) to be economically produced in large quantities is described. As an application example, the letter reports design, experimental performances, yield, and size data for a 5-Gb/s MMIC TIA using a low-cost 0.5-m GaAs field-effect transistor (FET) technology, showing outstanding experimental performances and optimized for a large-volume industrial production.

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Very wideband monolithic transimpedance amplifiers for mass production

Corso¹,

Bastida²,

Finardi³

et al.

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Design and producibility optimization of single-bias d.c. coupled 10 Gbit/s MMIC transimpedance amplifiers using a GaAs enhancement/depletion PHEMT technology

Corso

Bastida²,

Patiri³

et al.

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V. Patiri

Monolithic transimpedance amplifiers for low-costwideband optical links

A design approach for mass producible high-bit-rate MMIC transimpedance amplifiers

Very wideband monolithic transimpedance amplifiers for mass production

Design and producibility optimization of single-bias d.c. coupled 10 Gbit/s MMIC transimpedance amplifiers using a GaAs enhancement/depletion PHEMT technology

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