No abstract

In the frame of local-field concept the arising of attractive and repulsive parts of the interacting potential between of two nonpoint particles is considered. The consideration is based on the free energy of the system minimization. The local fields at the particles are found out from self-consistent equations. The formation of potential having as attractive as repulsing parts depends on the dimensions, shapes and polarizabilities (linear and nonlinear) of the particles. The interaction potentials for different shaped nanoparticles are calculated numerically. The strong dependence of the bonding energy on shape of the particles is pointed out.

We study the interaction between a nanoparticle and the surface of a solid in the framework of the local-field method. Assuming that the nanoparticle is characterized by a finite nonlinear polarizability, we obtain the interaction potential that is repulsive at short range and has an attractive long-range tail. Our numerical analysis shows that this potential strongly depends on the shape and size of the particle. Further, we study the particle-surface interaction in the presence of a surface plasmon polariton propagating along the interface. It is shown that the excitation of the surface wave leads to a drastic (about one order of magnitude) increase in the binding energy. Potential applications of this effect are discussed.

The analytical expressions for electron wave function of pyramid-like and cone-like quantum dot located on the semiconductor surface are obtained. The energy spectrum of electron states in the quantum dots is calculated. The dependence of energy levels on the angle at the vertex of an edge-shaped nanodots is studied. The distribution of electron density for different electronic states is calculated for each case. The dependence of function of linear response to the external field on vertex angle is calculated in the frame of proposed approach. The local field distributions for both pyramid-and cone-like particles are calculated.

In small‐area transistors, the trapping/detrapping of charge carriers to/from a single trap located in the gate oxide near the Si/SiO2 interface leads to the discrete switching of the transistor drain current, known as single‐trap phenomena (STP), resulting in random telegraph signals. Utilizing the STP‐approach, liquid‐gated (LG) nanowire (NW) field‐effect transistor biosensors have recently been proposed for ultimate biosensing with enhanced sensitivity. In this study, the impact of channel doping concentration on the capture process of charge carriers by a single trap in LG silicon NW structures is investigated. A significant effect of the channel doping concentration on the single‐trap dynamic is revealed. To understand the mechanism behind unusual capture time behavior compared to that predicted by the classical Shockley–Read–Hall theory, an analytical model based on the rigorous description of the additional energy barrier that charge carriers have to overcome to be captured by the trap at different gate voltages is developed. The enhancement of the sensitivity for single‐trap phenomena biosensing with an increase of the channel doping concentration is explained within the framework of the proposed analytical model. The results open prospects for the development of advanced single trap‐based devices.