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A monolithic two-stage high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS Power PHEMT technology called PPH25X in term of breakdown, and the adapted design regarding output mismatch and overdrive explain the performances of this device. The MMIC HPA, with a surface of 14.6 mm 2 , provides 8W output power in pulsed mode associated to a PAE of about 45 % at ambient temperature and can operate at 6dB compression in a wide frequency bandwidth (35% of frequency band). The good level of performance, the low sensitivity to the environment make this amplifier an excellent candidate for X band applications such as phased array active antennas.

Using conventional 0.25pm HEMT (VLN02 process) and pseudomorphic 0.15pm HEMT (MM015 process), a highly integrated and low power consumption receiver has been developed for a W-band radiometer. All the millimeterwave functions and even the first stage of IF amplifier are fully integrated on MMIC technology according to a multifunction approach. A compact housing has been developed for chip integration. A high performance oscillator at LO sub-harmonic provides less than -93dBc/Hz at lOOliHz from carrier at 46.6GHz. The complete frontsnd assembly exhibits more than 20dB conversion gain and less than 6.5dB noise figure around 93.5GHz RF frequency and 100 to 600MHz associated IF frequency. To our knowledge this realization is the first report of a fully monolithic W-band complete front-end based on industrial HEMT technologies and dedicated to space applications.

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