Cd,Hg,_,Te epitaxial layers ( x = 0.28) with cellular structure are studied. The influence of laser pulses of nanosecond duration over a wide energy range on the photoelectrical and electrophysical properties of Cd,Hgl-,Te epitaxial layers is investigated. Laser pulses above the material melting threshold cause the formation of a subsurface layer with a wider forbidden gap. This is connected with residual stress and with the change of composition in the subsurface layer. It has been shown that increasing photoconductivity of the studied layers is connected with the gettering properties of the regions of small disorientation towards the electrically active point defects.