A detailed experimental investigation was made of the phonon thermal conductivity on n-and p-type indium antimonide of single crystals (carrier concentrations 1014 to lo1* ~m -~) in the temperature range 2 to 100 OK. It is shown that the experimental results may be explained by a new mechanism of phonon scattering by charge carriers in the electrical field of impurity centres [2] and a more consistent consideration of the role of normal processes of phonon-phonon interaction a t low temperatures.Eine ausfiihrliche experimentelle Untersuchung der Phononenwiirmeleitfiihigkeit von n-und p-leitenden Indiumantimonid-Einkistallen (Ladungstriigerkonzentrationen von 1014 bis 10l8 ~r n -~) wurde im Temperaturbereich von 2 bis 100 OK durchgefiihrt. Es wird gezeigt, daB die experimentellen Ergebnisse durch einen neuen Mechanismus der Phononenstreuung an Ladungstriigern im elektrischen Feld von Defektzentren [2] und eine konsistent,ere Beriicksichtigung der Rolle der normalen Prozesse der Phonon-Phonon-Wechselwirkung bei tiefen Temperaturen erkliirt werden konnen.

The behaviour of the deep Cr impurity centres in InSb are investigated and the concentrations of different impurities in samples with different doping and compensation degree are obtained. The samples are obtained from a Czochralski grown monocrystal rod of InSb: Cr, Zn. The impurity concentration is calculated by means of a computer analysis of the total temperature dependences of the charge carrier concentrations n(T) and p(T), measured in the temperature intervals 63 to 140 K and 14 to 77 K, respectively. The degeneracy factor of the Cr centre and also the distribution of Cr, Zn, and the shallow donor concentrations along the rod are found. It is shown that all experimental data can be interpreted well, assuming Cr is an one‐charged deep acceptor.

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