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Optical characteristics are compared theoretically, and temperature differences of the Si wafer with the B doped SOI structure and substrate wafer are evaluated during rapid thermal annealing. It is shown that under identical annealing conditions and temperatures above 800 K, the difference in their temperatures can reach ~30 K. We studied the dependence of the total emissivity and temperature of the wafer with the SOI structure on the concentration of the doping impurity in the Si layer. The method of the quantitative analysis of variations of the wafer temperature under invariable annealing conditions depending on the variations of emissivity of its surfaces is suggested.

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