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The annealing induced enhancement in visible photoluminescence (PL) from nanocomposite (nc) ZnO-SiO x thin films was investigated. Nc ZnO-SiO x thin films consisting of ZnO nanocrystals in silica matrix were grown by depositing the films using radio frequency (rf) reactive co-sputtering and post-annealing them at temperatures of 350 ○ C and 500 ○ C in high vacuum and air. These films were characterized by Fourier transform infrared (FTIR), (PL) spectroscopy and UV-Vis spectrophotometry measurements. Thin films were also deposited on transmission electron microscopy (TEM) grids in almost identical conditions. The TEM measurement of the thin film deposited on TEM grid shows the formation of ZnO nanocrystals with a size distribution from 3.0 nm to 6.8 nm (þ=À0.2 nm) in silica matrix. The UV-Vis spectra of the films show absorption features of ZnO and Zn 2 SiO 4 phases in the films. The visible PL emission intensity and peak width increased in the annealed films. The results suggest increase in the number and size distribution of the ZnO nanocrystals in silica matrix due to the annealing resulting in increase in visible PL emission. The results of vacuum annealed films indicate that these films can be useful in the development of wide band visible light emitting devices using this material.

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