No abstract

Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / n-In 0.83 Ga 0.17 As 0.82 Sb 0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hν A which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga 0.84 In 0.16 As 0.22 Sb 0.78 /n-In 0.83 Ga 0.17 As 0.82 Sb 0.18 heterointerface, while the emission band hν B originates from radiative transitions involving acceptor states in the narrow gap In 0.83 Ga 0.17 As 0.82 Sb 0.18 near the type II heteroboundary.