The results of measurements of the electrical properties of silicon doped with aluminium by the photonuclear transmutation doping (PTO) technique are presented. The main consideration is a study of the homogeneity of the distribution of resistivity in the volume of p-type and n-type PTO silicon single crystals. The inhomogeneity of the resistivity is found to be a function of the inhomogeneity of the irradiation field and of the initial crystal doping level. Thus, by choosing the required uniformity of the irradiation field and by selecting t h e appropriate starting material, variations of the distribution of resistivity of p-type PTO silicon, both on a macroscopic and on a microscopic scale, can be reduced to a few per cent. The production of p-type and n-type high-resistivity silicon for detector fabrication is considered as a feasible commercial application of the PTO technique. The initial crystals of Silicon were irradiated by bremsstrahlung beams with endpoint energies in the range of 30 to 35 MeV on the Kurchatov Institute electron linear accelerator FAKEL using a prototype irradiation facility designed to provide a uniform bremsstrahlung fluence over the volume of a silicon target.