The aim of this paper is to characterize the polycrystalline and vitreous phases in the As2S3-Sb2S3-Sb2Te3 systems using several techniques such as XRD, SEM, EDS, and micro-Raman spectroscopy. The As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 semiconductor chalcogenide bulk glasses were examined using Scanning Electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-Ray diffraction (XRD) and micro-Raman analysis. The EDS quantitative and mapping analysis showed that for each investigated area, the identified elements were sulfur (S), arsenic (As), antimony (Sb) and tellurium (Te). These elements are present in constant atomic percentages on the entire sample, showing a good homogeneity of the samples. The study of samples by the above-mentioned methods showed the presence of crystalline phases and amorphous phases with the polycrystalline inclusions corresponding to the structural units AsS3, Sb2S3, and Sb2Те3.

The amorphous calcogenide semiconductor As0.63S2.70Sb1.37Te0.30 was synthesized and thin films based on it were obtained. XRD and optical images investigations showed the amorphous and homogeneous nature of the samples. The optical transmission spectrum in the UV-Vis range of As0.63S2.70Sb1.37Te0.30 thin films shows good transparency in the spectral range 0.7-3.5 µm with a single absorption threshold at 2.05 eV and with refractive index in infrared 2.3. The irradiation of films with light leads to a parallel shift of the transmission spectrum to the IR range. The materials with As0.63S2.70Sb1.37Te0.30 composition have high optical transparency have high optical transparency that make they promises for applications in holographic memory devices, optical amplitude and phase recorder, optical processing units and others.