This paper examines the performance of a specific family of dyed resists. The effect of dye concentration on the line profiles of a homologous series of positive photoresists is studied. Usable images are obtained with dye concentrations of 0 %, 0.4 %, and 0.6% (percentage of the formulation). Both standard softbake or a softbake plus post-exposure bake (PEB) processes are used. Resist linewidths and cross -sections are measured on substrates that are representative of those encountered on integrated circuits. Optical exposure and develop simulation parameters (two developers) for this family of resists are also extracted.