We report here on applying electric fields and dielectric media to achieve controlled alignment of single-crystal nickel silicide nanowires between two electrodes. Depending on the concentration of nanowire suspension and the distribution of electrical field, various configurations of nanowire interconnects, such as single, chained, and branched nanowires were aligned between the electrodes. Several alignment mechanisms, including the induced charge layer on the electrode surface, nanowire dipole-dipole interactions, and an enhanced local electrical field surrounding the aligned nanowires are proposed to explain these novel dielectrophoretic phenomena of one-dimensional nanostructures. This study demonstrates the promising potential of dielectrophoresis for constructing nanoscale interconnects using metallic nanowires as building blocks.

We present a floating-potential dielectrophoresis method used for the first time to achieve controlled alignment of an individual semiconducting or metallic single-walled carbon nanotube (SWCNT) between two electrical contacts with high repeatability. This result is significantly different from previous reports, in which bundles of SWCNTs were aligned between electrode arrays by a conventional dielectrophoresis process where the results were only collected from the control electrode regions. In this study, our alignment focus is not only on the regions of the control electrodes but also on those of the floating electrodes. Our results indicate that bundles of carbon nanotubes along with impurities were first moved into the region between two control electrodes while individual nanotubes without impurities were straightened and aligned between two floating electrodes. The measurements for the back-gated nanotube transistors made by this method displayed an on-off ratio and transconductance of 10(5) and 0.3 microS, respectively. These output and transport properties are comparable with those of nanotube transistors made by other methods. Most importantly, the findings in this study show an effective way to separate individual nanotubes from bundles and impurities and advance the processes for site-selective fabrication of single-SWCNT transistors and related electrical devices.

Two effective methods for dispersion and alignment of single-walled carbon nanotubes (SWCNTs) were developed. One is the floating-potential dielectrophoresis (FPD) method, which can achieve the alignment of individual SWCNTs between two electrodes with high yield (more than 30%) and high repeatability. The second is the gas blow method. Using the shear forces associated with a rapidly moving fluid, SWCNTs were positioned in a direction corresponding to the flow vector of the fluid. This technique shows great potential for scaling up the displacement of SWCNTs with controlled orientations. Various dispersion agents including ethanol, dichlorobenzene, sodium dodecyl sulfate (SDS) and DNA were investigated with these two methods. It was found that SDS was the most effective dielectric medium used for FPD dispersion and alignment of SWCNTs. The result of electric measurement for the individual SWCNTs aligned between two electrodes suggests that, using the FPD method, both metallic and semiconducting SWCNTs could be aligned between the electrodes. The individual SWCNT resistances measured range from 20 KΩ to 5 MΩ suggesting a high contact resistance between an aligned SWCNT and metal electrodes. High resolution transmission electron microscopy (TEM) and scanning electron microscopy (SEM) characterization reveal DNA molecules wrapped around the SWNCTs after the dispersion process which may affect the intrinsic properties of SWCNTs.