In this Letter, we present a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm. In this method, a macroscopic lens projects a pixelated optical mask on a monolayer of hexagonally arranged microspheres that reside on the Fourier plane and image the mask's pattern into a photoresist film. Our macroscopic lens shrinks the size of the mask by providing an imaging magnification of ∼1.86×10(4), while enhancing the exposure power. On the other hand, microsphere lens produces a sub-diffraction limit focal point-a so-called photonic nanojet-based on the near-surface focusing effect, which ensures an excellent patterning accuracy against the presence of surface roughness. Ray-optics simulation is utilized to design the bulk optics part of the lithography system, while a wave-optics simulation is implemented to simulate the optical properties of the exposed regions beneath the microspheres. We characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.

We present a quantitative study of the influence of three-dimensional geometry of the isolated electron–injection detectors on their characteristics. Significant improvements in the device performance are obtained as a result of scaling the injector diameter with respect to the trapping/absorbing layer diameters. Devices with about ten times smaller injector area with respect to the trapping/absorbing layer areas show more than an order of magnitude lower dark current, as well as an order of magnitude higher optical gain compared with devices of same size injector and trapping/absorbing layer areas. Devices with 10 μm injector diameter and 30 μm trapping/absorbing layer diameter show an optical gain of ∼2000 at bias voltage of −3 V with a cutoff wavelength of 1700 nm. Analytical expressions are derived for the electron-injection detector optical gain to qualitatively explain the significance of scaling the injector with respect to the absorber.

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This paper describes comprehensive analytical and simulation models for the design and optimization of the electron-injection based detectors. The electron-injection detectors evaluated here operate in the shortwave infrared range and utilize a type-II band alignment in InP/GaAsSb/ InGaAs material system. The unique geometry of detectors along with an inherent negativefeedback mechanism in the device allows for achieving high internal avalanche-free amplifications without any excess noise. Physics-based closed-form analytical models are derived for the detector rise time and dark current. Our optical gain model takes into account the drop in the optical gain at high optical power levels. Furthermore, numerical simulation studies of the electrical characteristics of the device show good agreement with our analytical models as well experimental data. Performance comparison between devices with different injector sizes shows that enhancement in the gain and speed is anticipated by reducing the injector size. Sensitivity analysis for the key detector parameters shows the relative importance of each parameter. The results of this study may provide useful information and guidelines for development of future electron-injection based detectors as well as other heterojunction photodetectors. V

We report a type of infrared switchable plasmonic quantum cascade laser, in which far field light in the midwave infrared (MWIR, 6.1 μm) is modulated by a near field interaction of light in the telecommunications wavelength (1.55 μm). To achieve this all-optical switch, we used cross-polarized bowtie antennas and a centrally located germanium nanoslab. The bowtie antenna squeezes the short wavelength light into the gap region, where the germanium is placed. The perturbation of refractive index of the germanium due to the free carrier absorption produced by short wavelength light changes the optical response of the antenna and the entire laser intensity at 6.1 μm significantly. This device shows a viable method to modulate the far field of a laser through a near field interaction.