No abstract

Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

A method for fabricating deep grating structures on a silicon carbide (SiC) surface by a femtosecond laser and chemical-selective etching is developed. Periodic lines corresponding to laser-induced structure change (LISC) are formed by femtosecond laser irradiation, and then the SiC material in the LISC zone is removed by a mixed solution of hydrofluoric acid and nitric acid to form grating grooves. Grating grooves with a high-aspect ratio of approximately 25 are obtained. To obtain a small grating period, femtosecond laser exposure through a phase mask was used to fabricate grating structures with a 1.07 μm period on the surface of the SiC.