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The popular use of biomedical implants has been going on in numerous applications that include the use of pacemakers and emerging retina prostheses, together with brain-computer interfaces. Other popular uses include drug delivery and smart orthopaedic implants. The avoidance of batteries or piercing wirings has made the wireless powering of these implantable devices highly attractive. In this paper, a design of a class-E power amplifier which has inductive loading appropriate for implant application was made using 130nm Silterra CMOS process at 2.4V supply. A presentation of high-Q on-chip inductors is made as a way of improving the efficiency of the wireless power transfer (WPT) system at 37.5MHz industrial, scientific and medical (ISM) band. Wireless power transfer efficiency of 59-89% is obtained for distance variation up to 10mm of the implant coil from the transmit power coil. DC voltage of more 3V is obtained for distance up to 10mm of the implant coil; and the on-chip implant inductor measures a smaller size of 10mm×10mm making the design more suitable for the application of medical implant.

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With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for implementation multimode multiband (MMMB) devices in the RF front-end of wireless handsets. This paper presents a design of multiband band pass filter (BPF) in 130nm standard CMOS technology that can operates in 12 different LTE bands (band 1, 2, 3, 4, 5, 8, 9, 11, 18, 19, 21 and 25). The filter response is tuned by employing switched capacitors in parallel with LC resonant circuit; and Q-factor of the filter is tuned using cross-coupled differential pair connected across the resonant circuit. The gain of 30dB with maximum bandwidth of 145 MHz at 900MHz center frequency, 328MHz at 1.5GHz center frequency and 594MHz at 2GHz center frequency is achieved at 3.3V supply. The Q-factor of the filter is tunable through 2.1 to 8.1. The 1-dB compression point (P1dB), third order intercept point (IP3), and noise figure achieved are -39dBm, -25dBm and 3.83dB respectively. The designed filter has the features of less BOM count and smaller area making it suitable for integration in modern wireless applications.