terms of the earth-abundancy of the material. More specifically, Zn-IV-N 2 with IV = Ge, Sn or Si may have a great potential for optoelectronic applications. Indeed, the direct band gap of Zn-IV-N 2 semiconductors may potentially cover the same range as that of the AlN-GaN-InN alloys, [4] and thus have the potential to be tailored to meet application-specific band gap energies. [1][2][3][5][6][7] In particular, ZnSnN 2 exhibits excellent properties for its use as the solar light absorber in photovoltaics and photocatalysts, but is less explored compared to that of ZnSiN 2 and ZnGeN 2 . According to calculations, the most energetically favorable structure for ZnSnN 2 is the orthorhombic Pna2 1 , although the orthorhombic Pmc2 1 structure has also been identified as a possible structure for ZnSnN 2 .