Extensive studies of the Emitter Dip Effect (EDE) in npn silicon structures are reported. Typically, 1 ohm‐cm n‐type silicon starting material was used. Boron diffusion into this material resulted in a 0.7μ base depth and surface concentrations of 1.8×1020 cm−3 . The emitter regions had surface concentrations of 3×1020 cm−3 and 0.4μ junction depths. The dip was typically 0.3μ, i.e., the base penetrated 0.3μ deeper under the emitter than elsewhere. Important experimental findings are: (A) Crucible grown, zone refined, and epitaxial silicon give the same results. (B) The EDE occurs only if phosphorus doping is sufficient to overcompensate the base doping. (C) Multiple emitter diffusion causes multiple dips. (D) Slow cooling from diffusion temperature enhances the dip. (E) An enhanced boron diffusion constant in the base layer apparently causes the dip rather than the rejection of boron by the region of high phosphorus concentration. (F) The dip is not present for lightly doped (1017 cm−3) base layers.

Two methods of producing high conductivity transparent contacts on ZnS single crystals are investigated. It is found that sputtering of In203: Sn onto the crystal followed by suitable heat-treatments gave much better results than a straightforward attempt at diffusion of compensated donor systems into the crystal lattice. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-02-07 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-02-07 to IP