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In this study, electrical behaviour of dual-gate (DG) and single-gate (SG) organic thin film transistors (OTFTs) is investigated using Atlas two-dimensional (2D) numerical device simulation. Compared with the SG, DG organic transistor shows improved performance because of the presence of two channels formed in DG device by charge carrier modulation. Furthermore, this study introduces all-p organic inverter circuits with diode-load and zero-V gs-load logic configurations using SG and DG structures. Static and dynamic behaviour of all-p organic inverter circuits is compared with addressing the effect of both the devices. A maximum voltage gain (A V) of 16 is obtained in zero-V gs-load logic using DG-OTFT, whereas SG-OTFT configuration produces a maximum A V of about 6.27. Significant improvements in propagation delay of 66% for diode-load and 53% for zero-V gs-load logic using DG-OTFT are obtained as compared with SG-OTFT.

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