Memristors are one of the emerging technologies that can potentially replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. Over the past few years, research and development mostly focused on revolutionizing the metal oxide materials, which are used as core components of the popular metal-insulator-metal memristors owing to their highly recognized resistive switching behavior. This paper outlines the recent advancements and characteristics of such memristive devices, with a special focus on (i) their established resistive switching mechanisms and (ii) the key challenges associated with their fabrication processes including the impeding criteria of material adaptation for the electrode, capping, and insulator component layers. Potential applications and an outlook into future development of metal oxide memristive devices are also outlined.

We use ultrasonic spray-coating to fabricate caesium containing triple-cation perovskite solar cells having a power conversion efficiency up to 17.8%. Our fabrication route involves a brief exposure of the partially wet spray-cast films to a coarse-vacuum; a process that is used to control film crystallisation. We show that films that are not vacuum exposed are relatively rough and inhomogeneous, while vacuum exposed films are smooth and consist of small and densely-packed perovskite crystals. The process techniques developed here represent a step towards a scalable and industrially compatible manufacturing process capable of creating stable and high-performance perovskite solar cells.

An encapsulation system comprising of a UV‐curable epoxy, a solution processed polymer interlayer, and a glass cover‐slip, is used to increase the stability of methylammonium lead triiodide (CH3NH3PbI3) perovskite planar inverted architecture photovoltaic (PV) devices. It is found this encapsulation system acts as an efficient barrier to extrinsic degradation processes (ingress of moisture and oxygen), and that the polymer acts as a barrier that protects the PV device from the epoxy before it is fully cured. This results in devices that maintain 80% of their initial power conversion efficiency after 1000 h of AM1.5 irradiation. Such devices are used as a benchmark and are compared with devices having initially enhanced efficiency as a result of a solvent annealing process. It is found that such solvent‐annealed devices undergo enhanced burn‐in and have a reduced long‐term efficiency, a result demonstrating that initially enhanced device efficiency does not necessarily result in long‐term stability.

Laser irradiation is used to generate PbI2 as a passivation technique for perovskite solar cells.

The dark electrical bias degradation of inverted perovskite solar cells is due to ion migration in the presence of moisture.