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A record tunability of 35 nm for the LP(11) cladding-mode resonance in a twisted mechanically induced long-period fiber grating using standard single-mode communication fiber is demonstrated. By forming the LP(11) resonance far away from its cut-off wavelength and modifying the grooves of the grating in the form of smooth semicircular humps, a high twist sensitivity of 8.75 nm/(rad/cm) and a controlled tunability of 35 nm is achieved. The fiber with its lacquer coating is not broken even at a severe twist rate of 5.44 rad/cm. The present design can be used as a novel variable optical selective wavelength attenuator since the bandwidth, rejection efficiency, and center wavelength can be controlled by changing the grating length, pressure over the grating, and fiber twist, respectively. Using the results, a cost-effective tunable variable optical attenuator for selective channel-blanking applications is also demonstrated. A fine tunability of 1.5 nm is achieved for a twist rate change of 0.1 rad/cm.

Transmission of electromagnetic waves through a Si-based one dimensional photonic crystal has been investigated. The proposed structure works as an omni-directional reflector for a certain range of wavelength for an angle of incidence up to 55˚. The structure works as a narrow band TM-polarization filter for an angle of incidence more than 55˚, i.e. a filter which completely blocks TE-polarized waves but allows certain wavelengths of TM-polarized waves. But at an angle of incidence of 89˚, the structure works as a multiple narrow band TM-polarization filter even though no defect layer is introduced inside the structure. It is also found that this multiple narrow pass-bands of TM-polarized waves can be tuned to a desired range of wavelength by changing the temperature of the structure.

The effect of the temperature and angle of incidence on the photonic band gap (PBG) for semiconductor-based photonic crystals has been investigated. The refractive index of semiconductor layers is taken as a function of temperature and wavelength. Three structures have been analyzed by choosing a semiconductor material for one of the two materials in a bilayer structure. The semiconductor material is taken to be ZnS, Si, and Ge with air in first, second, and third structures respectively. The shifting of band gaps with temperature is more pronounced in the third structure than in the first two structures because the change in the refractive index of Ge layers with temperature is more than the change of refractive index of both ZnS and Si layers with temperature. The propagation characteristics of the proposed structures are analyzed by transfer matrix method.