Ever since the discovery of SrAl2O4:Eu,Dy persistent afterglow material, that can intensively glow up to 20 h, the mechanism of long-lasting luminescence has been a popular area of research. The research is focused on discovering the mechanism of persistent luminescence in order to prolong the duration and intensity of afterglow in a controlled way. Although most researchers agree on the general things, there are still many unclarities and ambiguities to discuss upon. This review paper briefly sketches in the highlights of past research on the luminescence mechanism in SrAl2O4:Eu,Dy, mainly focusing on the research conducted in the past decade dedicated to clearing these ambiguities. This paper provides an overview of the latest persistent luminescence mechanisms offered by researchers.
SrAl2O4:Eu,Dy is a very efficient long afterglow phosphor with wide range of possible applications. The lumi-nescence properties and the possible luminescence mechanism of this material have been studied extensively, but there is almost no information available about the undoped material. Therefore, this article deals with the luminescence and thermally stimulate d luminescence of an undoped SrAl2O4, revealing the possible defects that might be involved in the creation of the long afterglow in doped material. We conclude that undoped material exhibits some luminescence under X-ray irradiation in low temperature; close to room temperatures lumines-cence is almost fully thermally quenched in comparison to low temperatures. We can observe F and F2 center luminescence as well as trace metal luminescence in the emission spectrum. TSL glow curve yields the peaks that are close to those observed in material with Eu and Dy doping; therefore these peaks are clearly related to intrinsic defects. The peak at around 400 K, that is shifting with rare earth doping, might be due to dopant interaction with intrinsic defects.
Temperature dependence of the afterglow of persistent luminescence material SrAl 2 O 4 :Eu,Dy is a major problem for outdoor low temperature applications. Therefore this publication deals with tailoring the material for better outdoor use by exploring the second mechanism, that is involved in the afterglowcharge tunnelling from the trapping center to the luminescence center. Structure, morphology, emission and thermally stimulated luminescence properties have been measured for SrAl 2 O 4 :Eu,Dy samples with different added boron percentage. The results indicate a change in morphology of the samples with increasing boron concentration, as well as a change in afterglow times. The low temperature luminescence intensity and afterglow time dependence of boron addition turns out to be different from the room temperature luminescence intensity and afterglow time dependence from boron concentration. Boron addition in necessary amount plays a key role to creating trapping centers in the material that are located spatially close to the luminescence center thus making the material afterglow possible even in low temperatures.
SrAl 2 O 4 : Eu, Dy, B particles were added in a phosphate glass (90NaPO 3-10NaF (in mol%)) using the direct doping method. For the first time, the composition of the particles prior to and after embedding them in the glass was analysed using EPMA analysis. Boron was found to be incorporated in already distorted surroundings creating new trapping centers in the particles which are thought to be favourable for the tunnelling process and so for the afterglow at 10K. Despite the partial decomposition of the particles, the glass exhibit afterglow at low temperature confirming to be promising materials for low temperature applications.
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