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Nano-channel electroporation (NEP) is a new technology for cell transfection, which provides superior gene delivery and cell viability to conventional bulk electroporation (BEP). In NEP, cells laid on a porous...

Ceramic materials such as aluminum oxide (Al 2 O 3 ) and aluminum nitride (AlN) are commonly implemented as heat sinks for a variety of applications. However, the thermal conductivity of these ceramics is too low to act as effective thermal management materials in power electronics applications. With high lateral thermal conductivity, graphitic films would be ideal materials to enhance the thermal management abilities of ceramics. Current direct chemical vapor deposition (CVD) methods can only grow several layers of graphene on ceramic substrates with poor adhesion to the substrate. We demonstrate a simple atmospheric pressure chemical vapor deposition (APCVD) method to deposit micrometerscale graphitic networks directly on the surface of ceramics making use of dual silicon oxycarbide (SiOC) sources. The graphitic networks have good adhesion to aluminum oxide and can provide sufficient thermal mass combined with superior hear transfer properties for effective thermal management enhancement of ceramic substrates.

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While effective in circumventing the transfer process of graphene films from metals to insulating substrates, graphene chemical vapor deposition (CVD) methods which grow directly on the surface of insulating substrates suffer from slow growth rates, lack of covalent bonding between both graphene layers within the film and the entire film and its substrate, and the inability to grow films beyond nanoscale thickness. An atmospheric pressure chemical vapor deposition (APCVD) process is described utilizing preplaced silicone rubber and continuously fed tetraethyl orthosilicate (TEOS) as dual silicon oxycarbide (SiOC) sources to facilitate fast surface coverage (30 s) and z‐thickness growth (136 nm min−1) of graphitic coatings consisting of a network of covalently bonded graphene layers directly on quartz while providing strong adhesion between the coating and the substrate via a semiconductive transition layer. This process can produce graphitic networks for a wide range of products including transparent conducting and semiconductive nanoscale graphene films, anisotropic micrometer‐scale coatings with in‐plane thermal conductivity >1000 W m−1 K−1 and standalone flakes with >40 µm thickness for thermal management applications.