No abstract

The detailed theoretical study of high-frequency signal gain, when a probe microwave signal is comparable to the AC pump electric field in a semiconductor superlattice, is presented. We identified conditions under which a doped superlattice biased by both DC and AC fields can generate or amplify high-frequency radiation composed of harmonics, half-harmonics, and fractional harmonics. Physical mechanisms behind the effects are discussed. It is revealed that in a general case, the amplification mechanism in superlattices is determined by the coexistence of both the phase-independent Bloch and phase-dependent parametric gain mechanisms. The interplay and contribution of these gain mechanisms can be adjusted by the sweeping AC pump strength and leveraging a proper phase between the pump and strong probe electric fields. Notably, a transition from the Bloch gain to the parametric gain, often naturally occurring as the amplitude of the amplified signal field grows, can facilitate an effective method of fractional harmonic generation in DC–AC-driven superlattices. The study also uncovers that the pure parametric generation of the fractional harmonics can be initiated via their ignition by switching the DC pump electric field. The findings open a promising avenue for the advancement of new miniature GHz–THz frequency generators, amplifiers, and dividers operating at room temperature.

We report on the experimental evidence of thermal terahertz (THz) emission tailored by magnetic polariton (MP) excitations in entirely GaAs-based structures equipped with metasurfaces. The n-GaAs/GaAs/TiAu structure was optimized using finite-difference time-domain (FDTD) simulations for the resonant MP excitations in the frequency range below 2 THz. Molecular beam epitaxy was used to grow the GaAs layer on the n-GaAs substrate, and a metasurface, comprising periodic TiAu squares, was formed on the top surface using UV laser lithography. The structures exhibited resonant reflectivity dips at room temperature and emissivity peaks at T=390 °C in the range from 0.7 THz to 1.3 THz, depending on the size of the square metacells. In addition, the excitations of the third harmonic were observed. The bandwidth was measured as narrow as 0.19 THz of the resonant emission line at 0.71 THz for a 42 μm metacell side length. An equivalent LC circuit model was used to describe the spectral positions of MP resonances analytically. Good agreement was achieved among the results of simulations, room temperature reflection measurements, thermal emission experiments, and equivalent LC circuit model calculations. Thermal emitters are mostly produced using a metal-insulator-metal (MIM) stack, whereas our proposed employment of n-GaAs substrate instead of metal film allows us to integrate the emitter with other GaAs optoelectronic devices. The MP resonance quality factors obtained at elevated temperatures (Q≈3.3to5.2) are very similar to those of MIM structures as well as to 2D plasmon resonance quality at cryogenic temperatures.

No abstract

No abstract