No abstract

The paper analyzes modern microminiature pressure sensors made on various diode structures, in particular on organic light-emitting diodes, field-effect transistors, photovoltaic elements and multi-circuit piezoresistive sensors. The possible areas of application of such sensors, their main advantages and disadvantages are shown. The study of 4 groups of samples of diode heterostructures based on CdS / ZnS / CuS / CdTe was carried out and the perspective of using pressure sensors based on these materials as an analogue of existing semiconductor devices was shown. On the basis of experimental studies with the application of pressure, twisting and illumination, it is substantiated that these structures are piezoelectric. The complete technological process of the step-by-step creation of these structures is presented. The obtained structures were analyzed: structural diagrams, current-voltage and piezoelectric characteristics in comparison with the characteristics of other piezoelectric materials are given. Possible areas of application of such structures are described. The provided design schemes and parameters of the obtained diode structures may be of interest to a wide range of specialists in the field of sensor technology and automation of various technological processes of microelectronic equipment manufacturing. It is shown that by changing the sensor manufacturing technologies and the concentration of chemical elements in the obtained films, it is possible to change the sensitivity of the sensor and the dynamic range of its operation, adapting the sensor parameters to the field of its application in the relevant measuring electronic equipment and pressure control systems.