Halide perovskites are promising materials for optoelectronics with an attractive radiation resistance property. In this article, we study the effect of 30 keV Ga+ ion irradiation on the photoluminescence (PL) of CsPbBr3 halide perovskite single crystals. The high crystal quality and liquid helium temperature studies make it possible to distinguish the radiation-defect-related PL band. A model to explain the band shifts with radiation dose and pulsed pump intensity has been developed. Bright defect PL allows the visualization of the irradiated areas using PL mapping. Manipulation of optical properties using focused ion beams opens wide opportunities for halide perovskite nanofabrication for optoelectronics.

Halide perovskites are promising semiconductor materials for optoelectronics.

Halide perovskites are novel photonics materials promising numerous applications in fields such as photovoltaics, LED light sources, microlasers, and radiation detectors. Many halide perovskites are direct-gap semiconductors, and Wannier–Mott excitons play a significant role in their optical properties near the fundamental absorption edge. The high oscillator strength of these states favors applications where efficient interaction with light is required. In this work, to study excitonic states in CsPbBr3 halide perovskite single crystals, the reflection spectroscopy at temperatures from 4 K was used. A reflection coefficient up to 70% was observed for the n=1 exciton state, followed by weak excited states of excitons with n=2 and n=3. It should be noted that the Sommerfeld enhancement factor should be considered for a correct description of the behavior of the dielectric constant, taking into account excitonic effects.

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