11111L5 lL 1.8 MICROCOPY RESOLUTION TEST CHART NATIONAL BUREAU OF STANDARDS-1I963-A

We present a comprehensive study of enhanced light funneling through a subwavelength aperture with realistic (lossy) epsilon-near-zero (ENZ) materials. We realize experimentally an inclusion-free ENZ material layer operating at optical frequencies and characterize its performance. An analytical expression describing light funneling through several structures involving ENZ coupling layers is developed, validated with numerical solutions of Maxwell equations, and utilized to relate the performance of the ENZ coupling systems to their main limiting factor, material losses.

We report room-temperature oscillations up to frequencies of 420 GHz in a GaAs resonant tunneling diode containing two 1.1-nm-thick AlAs barriers. These results are consistent with a recently proposed equivalent circuit model for these diodes in which an inductance accounts for the temporal delay associated with the quasibound-state lifetime. They are also in accordance with a generalized impedance model, described here, that includes the effect of the transit time delay across the depletion layer. Although the peak-to-valley ratio of the 420 GHz diode is only 1.5:1 at room temperature, we show that its speed is limited by the parasitic series resistance rather than by the low negative conductance. A threefold reduction in this resistance, along with a comparable increase in the peak-to-valley ratio, should allow oscillations up to about 1 THz.