We present a study of the effects of high and low energy neutron irradiation on CdTe and CdZnTe high resistivity detector grade material. The evolution of the defect states under increasing irradiation fluence has been monitored by means of photoinduced current transient spectroscopy analyses. Particular attention is placed on the comparison and correlation between the results from the two materials under the two different neutron irradiation energies. The behavior of the observed deep traps associated with defect states allowed us to attribute an origin to most of them and to understand the role they play in the charge carrier collection process and in the degradation of material spectroscopic capabilities.

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The behavior of detector-grade Cd0.9Zn0.1Te in a radiation-hostile environment has been investigated by studying the effects on the material defective states induced by γ irradiation. The detector performance is strongly affected by the presence of charge-trapping centers which may also intervene in the material compensation properties. We have investigated by photoinduced current transient spectroscopy analyses the evolution with increasing irradiation dose of the deep levels both present in the as-grown material and induced by the ionizing radiation. A significant correlation between the material resistivity and some deep levels behavior has been observed. We have compared this trend to the results obtained from γ-irradiated CdTe:Cl to better understand the role deep traps play in the compensation process of II–VI materials.

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