Effects of splayed columnar defects in NbSe2 single crystals introduced by 800 MeV Xe and 320 MeV Au irradiations were studied. Peak effects have been observed for both samples. For 320 MeV Au irradiated samples, the peak field is found to increase with increasing the splay angle, while in samples irradiated by 800 MeV Xe the peak field shows an opposite dependence. The temperature dependence of the peak field for these two samples are also different. Based on the analysis of pinning force density, this different temperature dependence of the peak field may originate from the different pinning mechanisms.