Articles you may be interested inImproved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates Two-dimensional electron systems were realized in InSb quantum wells with Al x In 1Ϫx Sb barrier layers ␦-doped with Si. Measured electron mobilities in multiple-quantum-well structures were as high as 41 000 cm 2 /V s at room temperature and 209 000 cm 2 /V s at 77 K. Simple models can be used to explain the observed dependencies of the electron density on the quantum-well-to-dopant distance and on the number of quantum wells. Characterization by atomic force microscopy indicates that layer morphology may be a factor limiting electron mobility.

Normal incidence infrared modulators using intersubband transitions in InAs/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy