Silicon samples were implanted with Au 2+ ions of energy 100 keV and doses of 10 14 cm −2 . The area of the implanted region was 2 mm × 2 mm. The size of the Si substrate samples was 5 mm × 5 mm × 0.4 mm. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers.

The simulation analysis of the measuring errors of the artillery radar stations is presented in this paper. This analysis enables the proper designing of the smoothing filters of the data for the ballistic module and determination of the components of the velocity of the target. They are derivatives of the signals representing coordinates of the target, and as such, can introduce huge errors during computations of derivatives.

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