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We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF2(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples aś well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50A PbTe)/(50 A SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrler concentrations can be tuned from 5 x 10 19 cm-3 to 1021 cm-3 depending on the MBE process parameters.

A method of interpretation of the diffuse scattering due to the short‐range ordering in a b.c.c. binary system is discussed. This ordering is represented by an arbitrarily defined “ordering function”. The results obtained for CrAl, TiFe, and TiMo alloys are in good agreement with experiment.