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The magnetic anisotropy energy (MAE) of bulk D022-Mn3X (X = Ga, Ge), Mn3X/MgO, and Mn3X/STiO3(STO) heterostructures is calculated from first principles calculations. The main source of the large perpendicular magnetic anisotropy (PMA) of bulk Mn3X is identified as Mn atoms in the Mn-Mn layer. In the four heterostructures, the magnetic moment of interfacial Mn atoms was reversed when Mn3X was epitaxially grown on MgO and STO substrates. More importantly, a large in-plane tensile strain induced by lattice mismatch between Mn3X and MgO significantly changes the MAE, explaining the difficulty in experiments to obtain PMA in epitaxial Mn3X/MgO. Furthermore, interface and surface Mn atoms also help to enhance the PMA of Mn3X/STO (MgO) heterostructures due to dxy and dz2 states changing from occupied states in bulk Mn3X to unoccupied states in the interface (surface) Mn of the heterostructures. These results suggest that the PMA of manganese compound heterostructures can be produced by decreasing the lattice mismatch with substrates and will guide the search for ultrathin manganese compound films with high PMA epitaxially grown on substrates for the application of spintronic devices.