Recombination dynamics of photoluminescence (PL) in colloidal CdSe/ZnS quantum dots (QDs) were studied using time-resolved PL measurements. The PL intensity shows a biexponential decay at 9 K, consisting of a fast component (∼1 ns) and a slow component (∼6.3 ns). Based on the emission-energy and temperature dependence of carrier lifetimes, we suggest that the fast and slow PL decay of colloidal CdSe/ZnS QDs originates from recombination of the delocalized carriers in the internal core states and the localized carriers at the interface, respectively.

Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted Si O 2 on silicon substrate J. Appl. Phys. 96, 3025 (2004); 10.1063/1.1775041The elementary steps of the photodissociation and recombination reactions of iodine molecules enclosed in cages and channels of zeolite crystals: A femtosecond time-resolved study of the geometry effect