SummaryIn this article, we have analyzed delay uncertainty due to crosstalk in multilayer graphene nanoribbon (MLGNR) interconnects. Crosstalk is a challenging problem in deep‐sub‐micron and nanometer designs. In this work, we have analyzed the crosstalk delay with a wide variation in chip operating temperature. The mean free path is modeled as a function of temperature. Furthermore, the resistance of MLGNR interconnect system is modeled. Crosstalk delay analysis is performed for both top‐contact MLGNR and side‐contact MLGNR (SC‐MLGNR) interconnects and compared the results with that of the traditional Cu interconnects. The analysis has been carried out for different interconnect widths 11, 16, and 22 nm and lengths 10, 50, and 100 μm for three different chip operating temperatures 233, 300, and 398K. The decrease in rise/fall delay (speed up) and increase in rise/fall time delay (slow down) are modeled. Finally, the delay uncertainty is modeled for different interconnect systems. The percentage change in delay values for speed up and slow down cases are −23.4%, −29.8% and 114.4%, 161.9%, respectively, for 10μm SC‐MLGNR interconnect. It is shown that the delay uncertainty is significantly less in SC‐MLGNR interconnects and with the advancement of technology the performance is improved as compared with copper interconnects.

In this work, we have presented the temperature-dependent analytical time domain model for top-contact multilayer graphene nanoribbon (TC-MLGNR) and side-contact multilayer graphene nanoribbon (SC-MLGNR) interconnects for 16[Formula: see text]nm technology node. Using this analytical model, the effective mean free path (MFP) is calculated for different temperatures and then the resistance of GNR interconnect is calculated. The lower resistance of MLGNR is one of the important factors to reduce interconnect delay. The equivalent capacitance for TC-MLGNR is also calculated. It is observed that the performance of graphene interconnects seriously deteriorates due to the presence of the interlayer capacitance. The presence of this interlayer capacitance increases the equivalent capacitance which is the dominant factor that inhibits the performance of TC-MLGNR interconnects. Further, the delay ratio between copper and TC-MLGNR for different interconnect lengths and for three different temperatures (233[Formula: see text]K, 300[Formula: see text]K, 378[Formula: see text]K) is calculated. It is observed that for longer interconnect lengths, the improvement in delay in TC-MLGNR is less as compared to traditional copper-based interconnect at low temperature. Further, power delay product (PDP) of copper and TC-MLGNR for different interconnect lengths and for three different temperatures is also calculated. It is shown that TC-MLGNR interconnects have better PDP than copper interconnects. The crosstalk analysis is performed to estimate the noise and overshoot/undershoot in TC-MLGNR and SC-MLGNR interconnects. It is shown that SC-MLGNR interconnect has better performance as far as the crosstalk is concerned as compared to that of Cu and TC-MLGNR interconnects.

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