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In this paper, we present the modeling of radiating emissions of an IGBT and of a power diode. Firstly, we have introduced the technique of measuring the magnetic near field. Secondly, we have studied the magnetic field radiated above an IGBT and the modeling method. The latter is an electromagnetic inverse method based on genetic algorithms. We have applied our method to find an equivalent radiating model of an IGBT. Another model has been developed for a power diode. The models for the two components have been validated. A generic model for the active components has been finally proposed at the end of the paper.

This chapter deals with modeling the radiation from rectangular film capacitors as a power electronics component. The rectangular film capacitors are sources of electromagnetic radiation, where its characterization is crucial for electronic circuits EMC. Our study presents the analyses and modeling of the magnetic near field radiated by the plastic and the polyester capacitors. An electromagnetic inverse method is combined with an optimization method based on genetic algorithms to create a radiating equivalent model. A very good agreement is observed between the magnetic near field cartography measured above the studied structure and calculated using the developed model parameters. Finally, a generic radiating model is proposed for various types of rectangular film capacitors. The generic model is validated using the measurements on a rectangular capacitor. The obtained equivalent model can calculate the magnetic field at any near field zone and far field around the capacitors. Circuit designers can use the field distribution to optimize the placement of the capacitors on the printed circuit board to reduce their coupling and potential interaction with other equipment in the vicinity of the system.

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