TX 78716 CSE]TECH 2706 Montopolis Dr. Austin, TX 78741-6499 dAssigee from Taiwan Semiconductor Manufacturing Company eAssiee from Intel ABSTRACT To meet the technology needs at their insertion into integrated circuit manufacturing, the testing and development processes of 300 mm wafer compatible tools require imaging of 1 80 nm and smaller features.In response to this need, processes employing commercially available chemicals intended for use on 200 mm substrates and capable ofproducmg 1 80 nm and smaller features were developed. Said processes were later used for examining critical dimension control on 300 mm wafers. The methods and the experimental designs used to optimize 300 mm coat, exposure, and develop processes for two positive acting, chemically amplified resist systems are described. A low activation energy resist, PEK-1 1 1A3 (Sumitomo Chemical), and a high activation energy resist, UV6 (Shipley Company), were coated on top of DUV42-6 antireflection layer (Brewer Science). Results show both resists capable of 140 urn equal line and space processing with process window size limited only by phase errors of the alternating phase-shift mask that induce image placement problems.

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