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Photoelectronic characteristics are investigated in well-aligned aluminum-coated ZnO nanorods ͑Al 2 O 3 /ZnO nanocables͒ grown on Si substrates buffered with ZnO film at a low temperature. Photoluminescence measurement indicates that a strong blue emission peak at ϳ450 nm appears at 400 and 600°C in O 2 and N 2 atmospheres, respectively. A 30ϫ enhancement of the relative intensity ratio of blue emission ͑I B ͒ to ultraviolet emission ͑I UV ͒ has been observed for the Al 2 O 3 /ZnO nanocables. Highresolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses reveal that the origin of the strong blue emission can be attributed to the structure transition and cleavage of the oxygen-hydrogen bond ͑OH͒ of the Al 2 O 3 /ZnO nanocable, which leads to the formation of singly ionized oxygen vacancies ͑Al-O • ͒.

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We have developed a very simple source optimization (SO) method for L/S and C/H critical layers patterning of advanced NAND FLASH. Starting from the strong off-axis illumination shape which is optimized for the finest structure of the mask pattern, a systematic procedure is performed to extract the optimum parameters of additional assist sources to balance the imaging performance (DOF, contrast and optical proximity effect, etc.) of dense/sparse/rough patterns. Performance equations (linear optimization) with performance map (sensitivity) are utilized to search the best combination of intensity for each assist source. For C/H pattern, the optimization procedure is modified to solve the non-linearity and non-continuity problems on the relationship between assist source intensity and each imaging performance. Finally, optimized source shapes have been successfully demonstrated and verified on 40 nm node NAND FLASH L/S and C/H critical patterns despite the simplicity of the optimization method, without utilizing SO dedicated software.