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A library of 2D semiconductors are prepared providing a new platform for developing high-performance optoelectronic devices. All-2D optoelectronic devices based on type-II p-MoS2/n-InSe vdWs heterojunctions operate at the near-IR wavelength range.

Summary Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-area p -MoTe 2 and n -MoS 2 , which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al 2 O 3 . Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of ∼0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits.