We wish to correct an oversight noted in the experimental description of the paper, altering this sentence from 'The base pressure in the growth chamber was ∼ 1.4 × 10 −11 Pa' to 'The base pressure in the growth chamber was ∼ 1.4 × 10 −8 Pa' (page 1508, line 7 of section 2. Experiments).

We have reported current-voltage characteristics of Ta/-and Ni/Ta/n-GaN Schottky diodes under various thermal treatments. Experimental data indicate that the electrical characteristics of Ni/Ta diodes are controlled by the interfacial properties of the Ta and GaN heterointerface for the as-deposited samples and strongly affected by the presence of an oxide layer (Ta 2 O 5) in those high-temperature-annealed diodes. In regard to Ta/Ni diodes, probably because of thermal stability and wide-bandgap properties of tantalum oxide, dramatic improvement in Schottky diode performance was resulted after annealing at high temperatures. The corresponding barrier height and ideality factor values can reach 1.17 eV and 1.09, respectively, even at an annealing temperature of 800 • C.